Hi
I have different combination of Si(x)Ge(1-x)  and SixGe1-xOy with x having
the value of 0.15, 0.30 and 0.40 and y having value starting from 0.03 to
17. My films are deposited on microscopic cover glass having 0.22 mm
thickness by RF sputtering at 33 SCCM of Ar flow for 2 hours. My expected
thickness is about 5-6 microns.
I need to determine the exact thickness as well as the value of n and k. I
did complete the transmission and reflection data using VASE made of J.
Wollam, but those having too many spikes. Can any one help me how can I
create a model for these kinds of thick samples and analyze the data? Thank
you in advance.
Mukti M Rana
PhD. Student in Electrical Engineering
The University of Texas at Arlington
Room # 208, Nano Fab Center
500 Cooper St. , Box 19072
Arlington, TX 76019, USA
Tel: (817) 272-1265 (Office)
       (817) 723-1090 (Cell)