durusmail: mems-talk: Sticking of Ni/Au with Si and p-GaN
Sticking of Ni/Au with Si and p-GaN
Sticking of Ni/Au with Si and p-GaN
Helmbrecht, Michael
2004-06-08
Hare,

Try using an adhesion layer such as Cr or Ti. About 10nm should do.

Good luck,
Michael


-----Original Message-----
From: hare krishna [mailto:krishna_it_bhu@yahoo.com]
Sent: Monday, June 07, 2004 9:01 AM
To: General MEMS discussion
Subject: [mems-talk] Sticking of Ni/Au with Si and p-GaN



Hi to all,             Can anybody suggest me on this problem...i deposited
first Ni(40nm) and then Au(80nm) on both Si and p-GaN under high vacuum
after patterning for the Lift-off process...but at the time of Lift-off the
whole deposited metal got stripped off...actually after deposition at room
temperature i just heated the sample in-situ (in vacuum) at 100C for one
hour...Is this the problem of sticking of Ni with Si and p-GaN or some other
problem...Suggest me... Thank You Hare KrishnaM.Tech Student IIT Kanpur





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