JARED_LERA/electronics_singlekh2_kihung_grp0@gp_man wrote:
>
> I know that TMAH is inert to high temperature or LPCVD silicon oxide.
>
> But does it react with PECVD silicon oxide (silane or TEOS)?
>
>
TMAH attacks silicon dioxide at a small but finite rate. The better the
oxide quality (usually highest for  thermally grown dry oxide), the lower
the rate. The acutual etch rate for the PECVD oxide will depend upon the
deposition conditions: there is no generic number. Generally, TMAH eats up
your mask orders of magnitudes slower than does KOH. I suggest that you do
an experiment on the PECVD deposited oxide to measure the etch rate.

We recently published a paper on the masking properties of low temperuture
ECR-PECVD oxide in KOH:
J. Pilchowski et al., Solicon Oxide Deposition in High Density Plasma for
Packaging Applications, Proceedings of the Electrochemical Society, 193rd
Meeting (San Diego)
Good luck
--
Alexander Hoelke

graduate student

University of Cincinnati
ECE - CMSM

Phone:  (513)556-1997 / (513)556-4795
FAX:            (513)556-7326