Hi,

I found a stange "phenomenon" when tried to clean SiO2-surface (there was also
some Ti and Au
structure on the chip).
After RIE cleaning we cleaned chip few minutes with H2SO4 and found that there
was some clumbs
formed on the surface. Possibly there was some extra layer formed and etched in
H2SO4.
RIE parameters: O2 flow 100%, power ~250 W, pressure 30 mTorr, 5 min.


Best wishes,

    Sampo Tuukkanen, University of Jyväskylä