>Hello,
>
>I want to etch silicon using SiO2 mask. At the
>temperature of 85 (C), after 75 minutes, KOH attacks
>to the SiO2 mask. The etchant solution is water: 80
>cc, Isopropyl alcohol: 20 cc, koh: 30 gr. What can I
>do to etch silicon?
>
>Regards,
>Mahdi Bagheri

Hi Mahdi,

  The etching is probably due to pinholes in your oxide layer.  Try placing
a low stress nitride layer between 500A - 2000A on top of your oxide.  This
should provide you with the protection you need.

Phil Tabada

_________________________________________________________________
Stop worrying about overloading your inbox - get MSN Hotmail Extra Storage!
http://join.msn.click-url.com/go/onm00200362ave/direct/01/