That etch rate is good for thermal oxide (wet or dry) in 5:1 BOE (5:1 BHF).
Be careful, as LPCVD and PECVD oxides etch faster,
and there are other BOE formulations such as 6:1, 7:1, and 10:1.
See papers online for data.
    --Kirt Williams

----- Original Message -----
From: "mahdi bagheri" 
To: "General MEMS discussion" 
Sent: Wednesday, June 16, 2004 6:37 AM
Subject: Re: [mems-talk] Container for KOH etching


> Hi,
> The etch rate in BOE is about 0.1 um/min [Madou, 1997]
> and you can use glass container for etching in KOH.
> Regards,
> Mahdi Bagheri
>
> --- Dhanamjaya R Guda  wrote:
> >
> >
> >
> >
> > I have a question  regarding the SiO2 etching which
> > I am planning to use as
> > the mask.
> >     I want to use BOE as the etchant.Does any one
> > have any particular idea
> > about the etch rate of SiO2 in BOE ( what would be
> > the concentration
> > profile). and
> >    what conatiner can i use for etching of Silicon
> > using KOH.
> > I would really appriciate if any one go a head and
> > answer to these
> > questions.
> >
> > Thanks,
> > Dhanamjaya Reddy Guda
> > Louisiana State University,
> > Department of Mechanical Engineering
> > Ph.No: 225-578-4412
> >