Hi,
        Could you pls let me know what kind of heat treatment you do for Cu.Also
i am using Cu along with Cr as an adhesion layer.Whatever i do Cr always get
oxidized.
     Thanks in advance,
            Dipankar Ghosh


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--------- Original Message ---------

DATE: Fri, 18 Jun 2004 18:18:47
From: MT Klaus Beschorner 
To: mems-talk@memsnet.org
Cc:

> >I am trying to sputter thick Cu ( 1 um) in a DC sputtering system.my
> >sputtering conditions are as follows :-
> >base pr- 10 exp(-6) torr
> >chamber pr -10 m torr
> >Ar gas flow - 10 sccm.
> >power - 250 W
> >Target to substrate distance - 5 cm.
> >
> >my problem is that the resistivity of my deposited Cu is very high (24
> >micro ohm cm) which is about 15 times the bulk resistivity of Cu( 1.6
> >micro ohm cm).
>
>With your base pressure level and low power, dep. time is very long
>and a lot of contaminants get incorporated in the film. Leading edge
>CMOS fabs use b.p. <1E-8 torr, 5-10kW power. Even then, as-deposited
>Cu resistance is higher than bulk (~2.5µOhmcm), subsequent anneal will
>reduce it to <2µOhmcm.
>
>best regards,
>klaus
>
>--
>Klaus Beschorner
>Metron Technology Europe, PVD (Eclipse) Process Manager
>Drosselweg 6,71120 Grafenau,Germany. Tel +49-7033-45683
>
>
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