Hi Yilei,
   I don't think it will work, particularly if the oxide is thermally
grown. Better to use LPCVD silicon nitride.

-Mike


>>> ylzhang@iastate.edu 6/22/2004 1:46:11 PM >>>
Hello:
I have a silicon wafer (around 800um thick) with 300nm SiO2 on one
side. and i
want to etch some small squares (2cm*1.5cm) through silicon without
breaking
the Sio2 layer above those squares. Is it possible? I am worrying about
the
thickness of the SiO2 layer and its intrinsic stress. Will increasing
the
thickness to 500nm be helpful? thanks.

Regards,
Yilei Zhang







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