durusmail: mems-talk: Backside Oxidation remove for DRIE
AlN dry etching
2004-07-19
2004-07-20
Intellisense Doubt :)
2004-07-20
Backside Oxidation remove for DRIE
2004-07-21
Backside Oxidation remove for DRIE
olivier.millet@delfmems.com
2004-07-21
Hi Lydia,

First, SiO2 at the backside can be used as etching stop layer, and
secondly, if you remove all SiO2 at the backside, may be it will induce a
curved wafer due to the bilayer SIO2/Si; it depands on the SiO2 mask area.

Olivier



> Dear all,
>
> I oxidized silicon (1 micron)for DRIE. Do I have to remove the sio2 at
> the  backside? or it does not matter?
>
> Thanks,
>
> Lydia
>
> -------------------------------------------------
> This mail sent through IMP: http://horde.org/imp/
> _______________________________________________
> MEMS-talk@memsnet.org mailing list: to unsubscribe or change your list
> options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk
> Hosted by the MEMS Exchange, providers of MEMS processing services.
> Visit us at http://www.memsnet.org/




reply