I would guess you should be able to remove the Titanium in 1%HF withouth
effecting your Aluminum. We use 1%HF to etch Titanium. I don't know how
resistant Aluminum is to this solution, but I would expect the effect to be
minimal.
We use a short anneal-step at 400°C in a damp-atmosphere to improve the
contact between a sputtered aluminum layer and and implanted silicon layer.
I don't know if this also improves the conductivity of the Aluminum itself,
but you could try. We use a furnace with a bubbler connected to it, where
N2-gas passes through water to create a N2-flow containing moisture. Just 5
minutes under these conditions is sufficient for our purpose. Hope this
helps.

Succes,
Jason

___________________________________________________________
Jason Viotty
Senior Process Engineer
C2V
http://www.c2v.nl
___________________________________________________________



-----Original Message-----
From: Stephan Biber [mailto:stephan@lhft.eei.uni-erlangen.de]
Sent: maandag 19 juli 2004 14:34
To: mems-talk@memsnet.org
Subject: [mems-talk] remove Ti from Alu


Hey there,

I have a 2µm thick layer of structured Aluminum on top of a Si-wafer. On
top of the Aluminum there is about 20-30nm of Titanium.

1. Does anyone know how to (chemically?) remove the Titanium without
chaning the size of the Aluminium structures within less than 1µm?
2. I read that the conductivity of sputtered Aluminum can be enhanced by
tempering it. Does anyone know some figures how much the conductivity
changes?

Bes regards,

Stephan
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