Hi!
In our process, we use postbake at 115°C for 90seconds
and flood exposure at 17mW/cm2 for 10seconds.
For removing your resist you can also use oxygen plasma,
if your devices can withstand it.

Ing. Paolo Tassini
Sezione MAT-NANO
Centro Ricerche ENEA Portici



> Hi Group,
> I know it sounds like a trivial question, but I am recently
> having great difficulty in removing AZ5214 photoresist that
> has undergone image reversal.  Even after no further
> processing beyond PR developing, I cannot easily strip the
> resist in Acetone.  Boiling acetone seems to have little
> effect on the resist. This is a standard procedure which I
> have not until recently had any problems with.
>
> See process below.  There is not prblem when I do the
> positive-image process.  Should I try lower postbake temp or
> lower flood exposure?  Why do you think I cannot remove the
> resist in acetone??  Thanks!
>
> Process is as follows:
> Spin AZ5214E PR at 5000 RPM / 30 sec.
> prebake at 110deg. C / 30 sec.
> expose 8 sec. in KS - MJB-3 (I don't know the intensity
> offhand)
> Postbake at 125deg. C / 60 sec.
> Flood expose 330 mJ/cm^2
> Develop 45 - 50 sec. in AZ327 MIF.
>