A 10:1 BOE solution for 15 seconds should be enough to remove native oxide on
silicon. Under normal circumstances there can be from 8-25 angstroms of native
oxide prior to removal by HF. If possible after DI water rinse it would be
better to dry using an isopropyl alcohol drying system and immediately go to
your sputtering system. If your sputtering system also has an RF clean station
prior to deposition you can Argon clean using that station prior to dep. Bob
Henderson