Hi Duhyun Lee,

   A 5 to 10 second dip in BOE will remove all the native oxide produced by
the cleaning regiment prior to processing.  However, a thin layer of native
oxide will quickly form on the surface after the etch.  You need to run a
oxide etch in your sputtering tool without breaking vacuum prior to
deposting any material.  Please read your MSDS sheets and take the proper
precaustions when dealing with HF because it can be very dangerous.

Phillipe Tabada


>From: "Lee, Duhyun" 
>Reply-To: General MEMS discussion 
>To: 
>Subject: [mems-talk] Si oxide removal
>Date: Fri, 10 Sep 2004 09:25:19 +0900
>
>Dear MEMS Talkers,
>
>I'm trying to remove the native oxide on Si (111) surface and
>to sputter a metal on the bare (111) surface.
>To my knowledge, BOE seems to be suitable but I have no experience on it.
>
>Please show me your recipe to get a fresh Si(111) surface for sputtering.
>
>Lee, Duhyun
>
>========================================
>duhyun@skku.edu
>Technology Innovation Center(TIC)
>Dep. of Advanced Materials Eng.
>Sungkyunkwan University, KOREA
>Tel +82-31-290-5645
>Fax +82-31-290-5644
>========================================
>
>
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