Dear Duhyun, this is not so simple an opperation, Once you etch the oxide with boe, the surface is hyrophobic, if you spin dry the wafer will be full of water spots, which will appear as defects, if you are doing this manually you shoud use a gentle but consolidated stream of water to remove the water from the surface. I know that that sounds crazy but as the surface is hyrophobic it is necessary to properly remove the water left from the boe. We make a system to do this whole operation automatically using hydrous hf gas, but I doubt that you can afford it. The thing is the drying method pretty much requires good eye hand coordination because you are pushing the water off with water. When wafer production was almost all 2 inches that is the method that was used. Gary Gary Hillman Service Support Specialties, Inc. 9 Mars Court PO Box 365 Montville, NJ 07045 973-263-0640 973-263-8888. -----Original Message----- From: Lee, Duhyun [SMTP:duhyun@skkutic.re.kr] Sent: Thursday, September 09, 2004 8:25 PM To: mems-talk@memsnet.org Subject: [mems-talk] Si oxide removal Dear MEMS Talkers, I'm trying to remove the native oxide on Si (111) surface and to sputter a metal on the bare (111) surface. To my knowledge, BOE seems to be suitable but I have no experience on it. Please show me your recipe to get a fresh Si(111) surface for sputtering. Lee, Duhyun ======================================== duhyun@skku.edu Technology Innovation Center(TIC) Dep. of Advanced Materials Eng. Sungkyunkwan University, KOREA Tel +82-31-290-5645 Fax +82-31-290-5644 ======================================== _______________________________________________ MEMS-talk@memsnet.org mailing list: to unsubscribe or change your list options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at http://www.memsnet.org/