Dear all,



I have a couple of questions that I show below:



1) I want to deposit Ta2O5 by LPCVD, using Tantalum Pentaethoxide (chemical
formula: Ta(OC2H5)5 and cas# 6074-84-6) as a precursor gas. I have never done a
process like that before. The boiling point of the Tantalum Pentaethoxide is
145ºC at a pressure of 0.1mmHg, but I am concerned, most of all, about its  low
melting point, which is 21ºC, because it might be solid at room temperature .
Has any of you worked before with this precursor gas? How should I introduce it
into the LPCVD chamber? Is there any comercial mechanism which turns the
pentaethoxide into a gas state and keep it in that state until its introduction
in the chamber? I would be very grateful if you could share your experience or
ideas with regard to this deposition process.



2) I want to etch a tantalum pentoxide film (Ta2O5) by a RIE process. I haven´t
found any recipe compatible with my Gas Pod yet, but I would love to hear about
the etching processes you may have already done to this material. The gases
available in my reactor are those: CHF3, O2, SF6, H2, Ar and one spare line.



Thank you in advanced for your attention,



Ana.