Dear Mems-Talk users,

For safety reasons we plan to establish an RIE system that uses safe
CH4/H2/Ar plasma for etching GaAs and other compund semiconductors.

I wonder what is the disadvantage of this chemistry when compared to
the popular and toxic BCl3 and SiCl4 ?

Can you compare these in terms of etch rate and isotropy for an
ordinary RIE system ?

Does CH4/H2/Ar really demand RF supply systems like ICP or ECR ?

Thank you in advance,

Best Regards,

Oray Orkun Cellek
Research Assistant, Ph.D. Candidate
Electrical & Electronics Engineering Department
Middle East Technical University
06531
Ankara, Turkey
e-mail : o.o.cellek@ieee.org
Tel : +90 312 210 4579
Fax: +90 312 210 1261