I will use CS1701 RIE to transfer gray level (3D) pattern on surface of
photoresist to germanium in the near future. It means that I want the etch
ratio to be about 1:1 (no selectivity). Is there any available process flow and
recipe? Since we have no experience on RIE, I am even not sure if CF4+O2 works
for this purpose. Can any one provide help? Any idea is highly appreciated.
Thanks a lot.

Best regards,
Zhiqiang Liu
RA, ECE department,
University of Miami
3052845918
zliu@umsis.miami.edu