Dear friends:

As suggested by MEMS discussion group, I tried to put Ti/Ni as a metal mask
for ICP etching using BCl3/Cl2. And the thickness of the metal layer is
Ti/Ni/Ti/Ni (50/700/50/700A). But right after i take the sample out of the
evaporator, the metal layer starts peeling off due to the stress built up,
or during the lift off, the metal is gone.

I am wondering anyone has a suggestion for a good adhesion of this Ni layer
on GaAs surface. I also learn that Cr can also serves as a metal mask for
BCl3/Cl2. Does anyone use that before? and How is it compared to Ni?

Thank you very much

Zhiyan



At 10:44 AM 11/2/2004, you wrote:
>It depends on the power levels and etched time being used for the process.
>For long etch times or high power etching, use Ti/Ni, Cr/Ni or NiCr.
>
>
>
>Dear all,
>
>Does anybody has an idea of the dry etch metal mask. The dry etched i used
>are Cl2/BCl3.
>
>Thank you ,
>
>Zhiyan
>
>
>
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