durusmail: mems-talk: Re: Etched pit on Si Wafer
Re: Etched pit on Si Wafer
Re: Etched pit on Si Wafer
Alexander Hoelke
1998-12-31
"N K Choudhary (97307404)" wrote:
>
> Hello folks
>         I am trying to fabricate an acceleration sensor. I intend to use
> force balance feed back to maintain constant tunneling current thus
> avoiding any non-linearity. Force balance electrode will be in a shallow
> pit of about 1000 to 1500 A.
>         My doubt is, after etching the pit and subsequently on removal of
> masking oxide will the pit and allignment marks be so visible so as to
> allign the next mask? Any suggestion is wellcome.
>         Thanking you guys in advance.
> regards
> choudhary
>
>
I think you will see it. Consider this: windows boe-etched into a
patterned oxide mask are still visible after a follwing complete removal
of the masking layer. Now that is very little etching of Si, but it is
clearly visible.
Good luck.
--
==============================================================
Alexander D. Hoelke, Graduate Student Electrical Engineering
        University of Cincinnati, Center for Microelectronic
        Sensors and MEMS (CMSM)    Cincinnati, Ohio 45221
Phone 513-556-4774 (work) 972-470-9735(home)
holkead@email.uc.edu
==============================================================


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