Are you sure about the contact? Little distance between mask and sample
(1um)produces divergence in the light beam. This is not important in big
features but it's crucial for small ones.

Fabio

Fabio Quaranta
CNR - IMM Sezione di Lecce
Campus Universitario
Via Monteroni
73100 LECCE
ufficio +39 0832422505
lab +39 0831508544
fax +39 0832422552
cell +39 3480525118
e-mail fabio.quaranta@imm.cnr.it
          fabio.quaranta@le.imm.cnr.it


-----Messaggio originale-----
Da: mems-talk-bounces@memsnet.org [mailto:mems-talk-bounces@memsnet.org]
Per conto di Brian Mc Cormack
Inviato: venerdì 17 dicembre 2004 19.25
A: mems-talk@memsnet.org
Oggetto: [mems-talk] Unwanted image reversal in contact printing

Hi,
I'm having problems with unwanted image reversal in S1813 resist
patterns. Large structures (connection pads etc.) are developing
properly (i.e. resist removal in exposed areas) but in equal line:space
gratings the image is reversed (i.e. resist is removed from areas which
should be dark field). It's standard g-line contact printing, 0.5um
resist layer and 1.8um linewidths in the grating structures. Any
suggestions for correcting this would be appreciated.

Thanks,
Brian

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