Hi there,

I would like to deposit 2um of Si3N4, by using LPCVD, on a SiO2/Ti/Pt to
prevent electrochemical damages in buffer solution.
And, I¡¯m afraid of the contamination of quartz tubes with Ti/Pt
during
LPCVD process.
I know Ti/Pt have relatively high melting and boiling temperature
(1773.5/1677 Celsius degree for melting, 3827/3277 Celsius degree for
boiling), but I¡¯m not confident of the contamination or not.

Does anybody give me some advices?

Jaeyoung