We etch sputtered photo resist with diluted hydrofluoric acid
(concentrated HF:DI Water=1:13) at room temperature. It etches about @
1700 A/min. Note that etch rate may varied on pre and post bake time and
temperature of photo resist. So while etching you need to look your
sample under the microscope every 15 seconds interval. We use Shipley
1813 positive photo resist for this purpose.

Mukti M Rana
PhD. Student in Electrical Engineering
The University of Texas at Arlington
Room # 208, Nano Fab Center
500 Cooper St. , Box 19072
Arlington, TX 76019, USA
Tel: (817) 272-1265 (Office)
       (817) 723-1090 (Cell)