Dear Mr. Martin,

I just seen your reply.

I need to deposit a thin 150 nm Si3N4 layer on a metal pattern Cr. My
lab has Si3N4 furnace, but i can not use furnace as the metal will
contaminate it, we don't have PECVD method for nitride deposition. So
i have only choice to go for sputtering process.

Can you give me some process parameters for Si3N4 sputtering, power,
current substrate temp, deposition rate ??

Do you think, SiO2 sputtering is a good choice than Si3N4 sputtering ?
Is pin hole problem will remain in SiO2 pattern ?

Thanks,
Pradeep

On Wed, 23 Feb 2005 13:58:33 -0500, Michael D Martin
 wrote:
> Hi Amol,
>    Standard sputtering of SixNy is problematic for use in MEMS
> devices. First it has a low sputter yield, so it takes a long time to
> deposite a resonable thickness. Second, and probably most important,
> these films always have lots of pin holes. So I would not count on these
> films for a masking layer.