Hi,

  I have question for SiO2 as a mask while etching Si in KOH. I have been
suggested that the maximum thickness of the thermally grown SiO2 that i could
use is only 1 micrometer and if i go beyond that there would some thermal stress
and thermally grown SiO2 is not stable. I would really like to known whether
there are any papers or any book that mentions about this. If there are, could
any of you suggest me. I would really appreciate for your help.

Thanks in advace

Dhanamjaya Guda