Hi,
The maximum thickness one can get in atmospherec tube is about a micron. Beyond
this one shoud use high pressuere oxidation to achieve higher thicknes. Any time
the stress, etch characteristics of grown oxides are a function of growth
parameters. To the best of my knowledge and my experience, thermally grown oxide
is definitely a stable film.

At present the trend in MOS technology is very thin oxide for gate and few
humdreds of microns for Field oxide. So, I do not think that there are any
papers in the recent past on growth of thick oxides.

You can try around 1975-1980. Few references can be found in VLSI technology ,
edited by SZE.Another good source is the application note of High pressure
oxidation system manufacturers.

Subrahmanyam

----- Original Message -----
From: guda  reddy 
Subject: [mems-talk] SiO2 As a Mask

>  I have question for SiO2 as a mask while etching Si in KOH. I
> have been suggested that the maximum thickness of the thermally
> grown SiO2 that i could use is only 1 micrometer and if i go
> beyond that there would some thermal stress and thermally grown
> SiO2 is not stable. I would really like to known whether there are
> any papers or any book that mentions about this. If there are,
> could any of you suggest me. I would really appreciate for your
> help.