I would support the others comments, all of our v-groove etching and
through wafer etching were with Nitride, simply because it is the better
mask. Thicker oxide begins to develop problems, and for us there is no
downside to Nitride, we simply deposit nitride instead of oxide.

Regards,

Joe Lonjin
Penn State Nanofabrication Facility

-----Original Message-----
From: guda reddy [mailto:dhanam2010@rediffmail.com]
Subject: [mems-talk] SiO2 As a Mask

Hi,
      Thank you guys for replying to my previous mail. What iam trying
to do was to make use of the silicon wafers with the grown oxide layer
to fabricate deep v-grooves using KOH. As you all know that one micro
thick is not sufficent enough to make deep grooves. I can go a head and
change the mask to silicon nitride, but before doing that i wanted to
know why can't we grow thicker oxide layers and use it for deeper
grooves. I am trying to look for some books or papers that gives me some
solid proof that i have change the my mask. If any of you guys can
mention the books or papers that i am looking for would be really
helpful and i would really appriciate for your help.