Julie:

It is doubtful that you will be able to make a photoresist process that has
vertical sidewalls using the alignment system you describe. Either a stepper or
using an anisotropic resist like SU-8 would be your best bet for good results.
SU-8 has much better selectivity than positive resists I have used in the past
for the drie process as well. You can contact MicroChem Corp for more
information on their resists. Bob Henderson

-----Original Message-----
From: Julie Verstraeten 
To: General MEMS discussion 
Sent: Mon, 27 Jun 2005 16:43:11 -0400
Subject: [mems-talk] exposure time for S1813 photoresist



Hello all,

I'm finally going to spin-coat 1 micron S1813 photoresist on my sample to form a
mask for future DRIE etch of silicon (Bosch process).

My photomask (for test purpose) includes open regions of 2 microns wide (to be
etched) separated from each other by 1 microns (for the shortest dimensions). I
would like these patterns to be transferred the most accurately to the
photoresist (vertical wall).

I so need to optimize the exposure time. Does someone have an idea of this time
(with and without Gline filter in Model 200 Tabletop Aligner)?

Another unknown is the S1813 selectivity in Bosch process (ASE STS DRIE).



Thank you,


Julie.



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