Hello everybody !

at the moment, I am trying to deposit silicon oxynitride films by PECVD, using
TEOS-N2-O2-NH3 gaz mixtures. In order to characterise the samples, I have only a
prism coupler, which enables me to get the index of refraction and the
thickness.Could anyone help me to find some relation between the residual stress
and/or the index of refraction . I am looking also for a relation between the
stoicheometry and the index of refraction.

I thank you in advance. Best regards.

Nader