durusmail: mems-talk: High etch rate of silicon using Dry etching method
High etch rate of silicon using Dry etching method
2005-08-30
2005-08-30
Determining the polarity of very small voltages
2005-09-02
2005-08-30
High etch rate of silicon using Dry etching method
JoyH Jonesq
2005-08-30
gases required are copper oxide, manganus oxide ...
--- harshal rokade  wrote:

> Hi,
>
> We have STS's PC 320 RIE system. i am interested in
> knowing, is it posible to etch silicon using this
> system with very high etch rate may be around
> 20um/min. which gases will be reqiiured?
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