Johannes,

You can try a mix of CF4 (16sccm) and O2 (5sccm) to etch it, RF power 100W,
chamber pressure as 35mtorr. Just a reference and you can optimize it, since
the machines are different from one to another.

Good luck,

Hongjun Zeng, PhD
MEMS/Nano Scientist
Nanotechnology core facility
University of Illinois at Chicago

-----Original Message-----
From: Johannes Grether
Sent: Tuesday, September 06, 2005 8:50 AM
To: mems-talk@memsnet.org
Subject: [mems-talk] plasma etching of parylene

Hi all together,

I have got a question concerning etching of parylene. As far as I know, the
way
to etch parylene is an oxygen plasma etching process. As the ratio to a
resist
is about 1:1, I want to use a chromium mask to pattern the parylene during
the
etching.
My question is: has anybody any expertise in this etching process and can
give
me some data that I can use as a guideline?