Hello,

I'm interested in Au/Au thermocompression fusion of gold coated GaAs/
AlGaAs and eventually also InP based epitaxial wafers.

The home-made system I can use for the moment has not the possibility
to bond under vacuum atmosphere. How critical is this parameter?
Moreover I've seen that for GaAs based systems bonding temperatures
of 380°C at 4 MPa of applied pressure may work fine, nevertheless
what parameters can I use for InP based systems where the InP
substrate start to decompose already at 360 °C?

Thanks

Lorenzo