I've done Au TC bonding successfully at 300-320 degC at atmospheric
pressure.  However, the required bonding pressure on is rather high,
>0.5 MPa. Assure that the surfaces in contact with the wafers are
parallel and flat, and perhaps place a soft material over the wafers to
avoid breakage.

Roger Shile

-----Original Message-----
From: Lorenzo Sirigu
Sent: Friday, November 11, 2005 12:19 AM
To: mems-talk@memsnet.org
Subject: [mems-talk] Au/Au thermocompression

Hello,

I'm interested in Au/Au thermocompression fusion of gold coated GaAs/
AlGaAs and eventually also InP based epitaxial wafers.

The home-made system I can use for the moment has not the possibility
to bond under vacuum atmosphere. How critical is this parameter?
Moreover I've seen that for GaAs based systems bonding temperatures
of 380°C at 4 MPa of applied pressure may work fine, nevertheless
what parameters can I use for InP based systems where the InP
substrate start to decompose already at 360 °C?

Thanks

Lorenzo