I believe most (perhaps all) people driving boron to 25 um do use a furnace
"pre-deposition".  Boron disks (usually boron-nitride) might be less
expensive to set up than say, BBr3 or B2O3.  You probably need a dose in the
range of 5E15 to 1E16 atoms/ cm2.  Watch out for "boron skin" during the
deposition.  You may need to employ a low temperature "wet" oxidation to
remove it.

Roger Brennan
3060 Reuben Drive
Reno, NV 89502
Home: rogerbr@earthlink.net
Home: 775-825-3060

Applications Director
Solecon Labs
770 Trademark Drive
Reno, NV 89521-5926
Work: roger@Solecon.com
Work: 775-853-5900 ext 108


-----Original Message-----
From: mems-talk-bounces@memsnet.org
[mailto:mems-talk-bounces@memsnet.org]On Behalf Of Vinay
Sent: Monday, December 19, 2005 10:12 AM
To: mems-talk@memsnet.org
Subject: [mems-talk] Boron implantation/thermal diffusion


Hello All,
We are trying to perform boron diffusion on silicon and hoping to achieve
depths in the range of 20 to 25um. I spoke to a couple of companies who do
ion implantation and they suggested i go with thermal diffusion of boron as
against ion implantation. What do you guys think? Any suggestions or
comments would be greatly appreatiated.