you could dry etch with oxygen plasma if you have an asher or rie

-----Original Message-----
From: mems-talk-bounces@memsnet.org [mailto:mems-talk-bounces@memsnet.org] On
Behalf Of Sven Holmström
Sent: Wednesday, December 21, 2005 7:01 AM
To: mems-talk@memsnet.org
Subject: [mems-talk] Removing dry resist


Hi

We have a problem regarding the removal of resist.

We have two wafers with memsstructure of aliminum and gold respectively. We want
to release them by etching a sacrificial crome layer. On top of the crome a
protective layer of Shipley's S1813 resist was put to protect the wafers durings
transport.

The resist was only softbaked after spinning.

What obviously happened was that the wafers were stored for too long (around six
moths) and now the resist can't be stripped by acetone, which is what we
normally use.

Can anyone here think of any other way to remove the resist? It might be
possible to etch itm but most ethcants etch metals faster than resists, which
would be a big problem.