Hi,

I would go for oxygen plasma, ash the deteriorated photoresist while leave
the metals intact.

---
c.k.yang@tudelft.nl
Microelectronics TU Delft


----- Original Message -----
From: "Sven Holmstrvm" 
To: 
Sent: Wednesday, December 21, 2005 1:01 PM
Subject: [mems-talk] Removing dry resist


> Hi
>
> We have a problem regarding the removal of resist.
>
> We have two wafers with memsstructure of aliminum and gold
> respectively. We want to release them by etching a sacrificial crome
> layer. On top of the crome a protective layer of Shipley's S1813
> resist was put to protect the wafers durings transport.
>
> The resist was only softbaked after spinning.
>
> What obviously happened was that the wafers were stored for too long
> (around six moths) and now the resist can't be stripped by acetone,
> which is what we normally use.
>
> Can anyone here think of any other way to remove the resist? It might
> be possible to etch itm but most ethcants etch metals faster than
> resists, which would be a big problem.