As far as I know, most of the IPA will always float on top of the KOH. However, a small amount of the IPA will dissolve, and this should be enough for both changing the anisotropy properties and reduce undercutting. Good luck! Karin ******************************************************************************** *** Dr. Karin Hermansson European Marketing Manager BCO Technologies PLC 339 Glen Road Belfast BT11 8BU United Kingdom Tel: +44 1232 615599 Fax: +44 1232 616788 Mob: +44 410 423479 **** Don't forget - we're on the Internet! http://www.bco-technologies.com **** ******************************************************************************** *** -----Original Message----- From: PC :jhku@dewell.dewell.co.kr [SMTP:PC :jhku@dewell.dewell.co.kr] Sent: Thursday, June 11, 1998 8:15 AM To: MEMS@ISI.EDU; scott.blackstone@BCO-Technologies.com; Karin.Hermansson @BCO-Technologies.com Subject: anisotropic etching of <100> wafers I have got some questions regarding to anisotropic etching of <100> wafers we are etching v-grooves on 4" <100> wafers. there are some problems about silicon undercutting. I heard that isopropyl alcohol may be added to reduce the undercutting. but Isopropyl alcohol does not mix with water . We are now using KOH+ D.I water etchant and considering new method to add isopropyl alcohol. I want to know the way to mix with isopropyl alcohol. we tried some methods using stirrer etc but failed. If you have a good method. please tell me the method as soon as possible! << File: ENVELOPE.TXT >>