durusmail: mems-talk: silicon nitride: mechanism leading to intrinsic stress
Thermal Etching Conditions for Yttria Stabilized Zirconia
silicon nitride: mechanism leading to intrinsic stress
silicon nitride: mechanism leading to intrinsic stress
Andrea Mazzolari
2006-02-24
Silicon Nitride deposited by LPCVD result in a tensile stress ranging from
90-1000 MPa.
This tensile stress is the sum of a thermal stress (compressive) and an
intrinsic stress (tensile). The last one is very dependent on deposition
condition. Which is the mechanism which lead to intrinsic stress formation?

Many thanks
Andrea

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