I think he means advanced oxide etching, which gives ~0.3um per minute rate
for silica.

Good luck,

--------------------------------------
Hongjun Zeng, PhD
MEMS/Nano Scientist
Nanotechnology Core Facility
(NCF formerly MAL)
University of Illinois at Chicago
3064 ERF Building
842 W. Taylor St., Chicago, IL 60607
Tel. 312-355-1259, Fax: 312-413-0447
------------------------------------

-----Original Message-----
From: mems-talk-bounces@memsnet.org [mailto:mems-talk-bounces@memsnet.org]
On Behalf Of yilei zhang
Sent: Monday, February 27, 2006 7:27 PM
To: 'General MEMS discussion'
Subject: RE: [mems-talk] anisotropic etching of silica

Dear Pradeep,
How fast can DRIE etch silica? Since silica is used as mask during DRIE, it
may take too long to etch silica, say 20um. Do you mean by varying
parameters, etch rate can be much faster? Thanks.

Regards,
Yilei Zhang