Hi all,

    I am using silicon nitride as the masking material.
  I've checked the previous emails that 400-500A should be sufficient in my
case.
  However I've got 2000A of silicon nitride on a silicon wafer.

  I am aware that HF and H3PO4 could etch the nitride layer.
  I'm planning to etch out 1500 A of the nitride layer before any lithography
and etc.
  My concern is, will the etching has any negative impact to other process later
on?
  Really appreciate for any help.

  -newcomer-