Hi,
First of all I assume that you have a good quarts furnace with a long enough
flat temp zone of over 950 deg C and a steam generator.
If you do, Clean the wafers using RCA 1 and 2.
Have the furnace set at 550 deg. With nitrogen flowing
Slide the wafer boat in at a rate of about 5 cm per min.
When at the flat zone, ramp temp to ~950-1075 deg.
Apply oxygen / steam.
Oxidation time depends on the xtal orientation,  water content, temperature
and final required  oxide thickness.
Aprox time you can find in semiconductor physics or processing text books.
They will be accurate for dry ox but you will have to calibrate for wet.
If you don't have a steam generator, email me and I will try to instruct you
on how to build one

shay

-----Original Message-----
From: mems-talk-bounces@memsnet.org [mailto:mems-talk-bounces@memsnet.org]
On Behalf Of Hui Han
Sent: Wednesday, March 08, 2006 5:49 PM
To: mems-talk@memsnet.org
Subject: [mems-talk] Thermal Growth silicon dioxide

Hi, all,
   I need some help in thermal growth SiO2, including the detailed steps
(for example, if the Si sbustrate are directly interted into and removed out
from the tube furnance or not), the rough growth rate.

   I want to use water steam to promote the oxidation.

Thanks for helps.
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