For oxide growth rate, see this:

http://ee.byu.edu/cleanroom/OxideThickCalc.phtml

Select 'wet' for steam oxidation.

I'm not an expert in this, but I guess wafers should be loaded and removed in a
nitrogen atmosphere.

Regards,

Martin.

-------------------------
Dr. Martin Prest
Research Fellow
Emerging Device Technology Research Centre
The University of Birmingham
U.K.
-------------------------

> -----Original Message-----
> From: Hui Han [mailto:han005@bama.ua.edu]
> Sent: 08 March 2006 15:49
> To: mems-talk@memsnet.org
> Subject: [mems-talk] Thermal Growth silicon dioxide
>
> Hi, all,
>    I need some help in thermal growth SiO2, including the
> detailed steps
> (for example, if the Si sbustrate are directly interted into
> and removed
> out from the tube furnance or not), the rough growth rate.
>
>    I want to use water steam to promote the oxidation.
>
> Thanks for helps.