Hi, all,
   I need some help in preparation Platinized silicon. Our starting
materials are oxidized silicon (SiO2: 400nm), and then we can using
e-beam evaporation to evaporate Ti additive layer and Pt layer. So I
want to know:

1. detailed annealing procedures for Ti layer, such as atmosphere, temp
ramping and cooling rate.

2. detailed annealing procedures for Pt layer, the same as above.

Our aimed structure is Si(100)/SiO2(400nm)/TiOx(40nm)/Pt(111)(about 150nm).


Thanks.

Hui Han