Hi,

I use AZ5214E and AZ 422 developer. My Prebake and PEB are both at 90C
for 30 minutes. The liftoff is pretty good.

Visit the following link for more information:

http://www-mtl.mit.edu/services/fabrication/sops/photoresist.html

Hope this helps
Kamesh

On 3/24/06, Yawei Li  wrote:
> Hello everyone,
>
> I am working on the image reversal photoresist AZ 5214 (about 3um
> thick)on 4" Si wafer with undercut profile for metal liftoff.
>
> The recipes I tried are as follows:
>
> HMDS
> Spin @ 1000 rpm for 45 sec
> prebake 95 degree 60 sec on hotplate
> Image exposure   5-40 sec at 8.8mW/cm^2
> PEB   115 degree for 1-2min on hotplate
> Flood exposure 27-120 sec at 8.8 mW/cm^2
> Development in AZ 400K (1:4)
>
> But I could not get the feature clear before the exposed area peel off
> even I increase the imagewise exposure dose and PEB.
>
> Does anyone have experience with AZ 5214 for 3um thickness?  Can you
> share your recipe with me or give me some suggestion about the recipe?