Hi,

There are so many journal papers published in this area. You can check J.
Vac. Sci. Tech. A and B for such papers. Details of some papers are given
below:

A. A. Ayon, R. A. Braff, R. Bayt, H.H. Sawin and M.A. Schmidt,  *J.
Electrochem. Soc., * *146*, 2730-2736 (1999).
* * J. X. Gao, L. P. Yeo, M. B. Chan-Park, J. M. Miao, Y. H. Yan, J. B. Sun,
Y. C. Lam, and C. Y. Yue, J. Micromech. Sys., *15*, 84-93 (2006).
* *M.A. Blauw, T. Zijlstra, and E.V. Drift, *J. Vac. Sci. Tech.* *B*,* 19*,
2930-2934 (2001).
* *J. Kiihamaki,  *J. Vac. Sci. Tech.* *A**, 18,* 1385-1389 (2000).
M. Boer, J.G. Gardeniers, H. Jansen, E. Smulders, M. Gilde, G. Rpelofs, J.
Sasserath, M. Elwenspoek, *J. Micromech Sy. **11,* 385-401  (2002).
* *J. Kiihamaki and S. Franssila, *J. Vac. Sci. Tech.* *A**, 17,* 2280-2285
(1999).
A. A. Ayón, R. Braff, C. C. Lin, H. H. Sawin, and M. A. Schmidt, *J.
Electrochem. Soc.*, *146*, 339-349 (1999).
* *S. Aachboun and P. Ranson in *J. Vac. Sci. Tech.* *A**, 17, *2270-2273
(2001).

Thanks,
Pradeep

On 4/19/06, K A Chan  wrote:
>
> Hi,
> Does anyone have any DRIE process information (STS or Alcatel or Oxford
> system) which describes the impact of each parameter (frequency, power,
> etching species, pressure etc..) and the mechanisms during etching?
> Please share the information with me or let me know where I can find
> these information.