Hi,


Here's what I find interresting about DRIE process. Some of these papers were
sent from this mems-talk.

"Effect of Process Parameters on the Surface Morphology and Mechanical
Performance of Silicon Structures After Deep Reactive Ion Etching (DRIE)",
Kuo-Shen Chen, Arturo A. Ayón, JOURNAL OF MICROELECTROMECHANICAL SYSTEMS,
VOL.
11, NO. 3, JUNE 2002

"Dependences of bottom and sidewall etch rates on bias voltage and source power
during the etching of poly-Si and fluorocarbon polymer using SF6, C4F8 , and O2
plasmas", Jae-Ho Min, Gyeo-Re Lee, J. Vac. Sci. Technol. Jun 2004

"Characterization of a Time Multiplexed Inductively Coupled
Plasma Etcher", A. A. Ayón, R. Braff, A. A. Ayón, R. Braff, Journal of
The
Electrochemical Society, 146 (1) 339-349 (1999)

"Guidelines for Etching Silicon MEMS Structures Using Fluorine High-Density
Plasmas at Cryogenic Temperatures", Meint J. de Boer,JOURNAL OF
MICROELECTROMECHANICAL SYSTEMS, VOL. 11, NO. 4, AUGUST 2002


www.vtt.fi/inf/pdf/publications/2005/P559.pdf

"State of the art deep silicon anisotropic etching on SOI bonded substrates for
dielectric isolation and mems application" (symposium, Hawaii, 1999)



Julie