Xiaoding,
You can deposit a thin oxide than the Nitride
Best Regards,

Glenn

-----Original Message-----
From: yuzhul@eden.rutgers.edu [mailto:yuzhul@eden.rutgers.edu]
Sent: Sunday, April 23, 2006 4:11 PM
To: mems-talk@memsnet.org
Subject: [mems-talk] Cu will be oxidized Re: Growing SiN on copper
filmusing PECVD?

No, you can't. Cu will quickly by oxidized in PECVD chamber.
And you will find Cu/SiN cracked and peels off.

> Yes. You can. SiN layer can be used as Cu diffusion layer.