Cu will get oxidized in the air to form very thin CuO. In SiN PECVD, you
will have only 3SiH4 + 2NH3 +N2 ==> Si3N4 (film) + 9H2. There is no O2.
People have been using SiN as Cu diffusion barrier in advanced Cu CMOS
technology for very long time.

----- Original Message -----
*From:* yuzhul@eden.rutgers.edu
*To:* mems-talk@memsnet.org
*Sent:* 24 April 2006 00:11:17
*Subject:* [mems-talk] Cu will be oxidized Re: Growing SiN on copper
film using PECVD?


> No, you can't. Cu will quickly by oxidized in PECVD chamber.
> And you will find Cu/SiN cracked and peels off.
>
>
>> Yes. You can. SiN layer can be used as Cu diffusion layer.
>>
>> ----- Original Message -----
>> *From:* "Xiaoding wei" 
>> *To:* mems-talk@memsnet.org
>> *Sent:* 04 April 2006 03:46:34
>> *Subject:* [mems-talk] Growing SiN on copper film using PECVD?
>>
>>> Hi, Does anyone know if I can grow a SiN layer on copper film using
>>> PECVD method?