Hello

  I need to use KOH as anitropic etchant to etch silicon.
  I sputtered Cr as mask. The recipe I used is:

  200 W DC, 4 mtorr pressure at room temperature.
  It gave me 600 nm Cr film on silicon wafer.

  When I immeresed the wafer in KOH solution (44% by weight
  at 85 Deg. C) for 5 minutes the Cr on back side of the wafer
  was peeled off and in the front side of the wafer the Cr became dull
  (though it did not peel off). Do I have to anneal the Cr after
  sputtering or do I need to use higher temperature during sputtering?

  Can anyone give me a good recipe for Cr Sputtering?

  Thank you,

  Zia