If you are willing to make the trench first and then dope, Plasma Immersion
Ion Implant (PIII) has been touted as a good way to dope sidewalls.  Any
number of furnace doping methods should work -- including BN and other disks
used as a doping source.

Roger Brennan
Solecon Labs

-----Original Message-----
From: mems-talk-bounces@memsnet.org
[mailto:mems-talk-bounces@memsnet.org]On Behalf Of
danieljohnsonusa@netscape.net
Sent: Thursday, May 04, 2006 4:24 PM
To: mems-talk@memsnet.org.
Subject: [mems-talk] forming boron and arsenic doped sidewalls in a
siliconwafer


I am trying to form boron and arsenic doped sidewalls in trenches in a
silicon wafer.  I thought of doing reactive ion or electrochemical etching
of the trench bottom after isotropic doping, but I'm worried that the
reaction will be hard to time correctly because the silicon underneath would
etch much faster than the doped layer.  Any thoughts you have on the most
efficient process to form doped sidewalls would be greatly appreciated.

Thanks,

Daniel
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