Dear all,
We are starting the characterization of SU8 2000.2 (200nm film thickness) on SOI
substrates fo 80nm isolated lines definition, using Raith150 EBL system.
We did a lot of experiments but, up to now the standard formulation seems too
fast:we have low resolution and very strong resist residuals close to the
pattern exposed.Sometimes we have observed some adhesion problems after
development.Resist residuals and adhesion problems seem to happen at any dose
factor and step size.

Do you have some suggestion?

Note: we use SU8 developer (60sec), softbake:1min 95C, PEB:1min 95C,
acceleration voltage 30Kev.

Thanks in advance
Noemi